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标 题 |
更新时间 |
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ABB GTO二极管5SGF 30J4502
Gate turn-off Thyristor5SGF 30J4502PRELIMINARYVDRM= 4500 VITGQM= 3000 AITSM= 24 kAVT0= 1.80 VrT= 0.70 mΩVDClin= 3000 V
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2024-08-16 |
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ABB GTO二极管5SGF 40L4502
Asymmetric Gate turn-offThyristor5SGF 40L4502VDRM=4500 VITGQM=4000 AITSM= 25103AVT0=1.2 VrT=0.65 mWVDclink=2800 V专利自
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2024-08-16 |
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ABB GTO二极管5SGA 40L4501
Asymmetric Gate turn-off Thyristor5SGA 40L4501VDRM= 4500 VITGQM= 4000 AITSM= 25103AVT0= 2.1 VrT= 0.58 mWVDclink= 2800 V
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2024-08-16 |
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ABB GTO二极管5SGA 20H4502
Gate turn-off Thyristor5SGA 20H4502VDRM= 4500 VITGQM= 2000 AITSM= 13 kAVT0= 1.80 VrT= 0.85 mΩVDClin= 2200 V 专利自由漂
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2024-08-08 |
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ABB GTO二极管5SGA 06D4502
Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM=4500 VITGQM=600 AITSM=3103AVT0=1.9 VrT=3.5 mWVDclink=2800 V
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2024-08-08 |
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ABB IGBT模块5SLD 1500J450350
价格：电议/面议起订量： 1供货总量： 999发货期： 10天内发货包装说明:： 盒装产品规格： 只日期： 2024ABB IGBT模块5SLD1500J4
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2024-08-06 |
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ABB IGBT模块5SNA 1500G450300
ABB IGBT模块5SNA1500G4503005SNA 1500G450300HiPak IGBT ModuleVCE = 4500 VIC = 1500 A超低损耗SPT++技术具有增加的二极管面积
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2024-08-06 |
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ABB IGBT模块5SNA 1500G450350
ABB IGBT模块5SNA1500G4503505SNA 1500G450350HiPak IGBT ModuleVCE = 4500 VIC = 1500 A超低损耗SPT++技术具有增加的二极管面积
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2024-08-06 |
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